Title Non-linear excitation of quantum emitters in hexagonal boron nitride multiplayers
نویسندگان
چکیده
nitride multiplayers Author(s) A., Schell; T., Trran; H., Takashima; Aharonovich, I.; Shigeki, Takeuchi Citation AIP APL Photonics (2016), 1 Issue Date 2016-09-01 URL http://hdl.handle.net/2433/217105 Right © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Type Journal Article Textversion publisher
منابع مشابه
Design of photonic microcavities in hexagonal boron nitride
We propose and design photonic crystal cavities (PCCs) in hexagonal boron nitride (hBN) for diverse photonic and quantum applications. Two dimensional (2D) hBN flakes contain quantum emitters which are ultra-bright and photostable at room temperature. To achieve optimal coupling of these emitters to optical resonators, fabrication of cavities from hBN is therefore required to maximize the overl...
متن کاملQuantum mechanical study of electronic and structural properties of methyl benzoate in interaction with boron nitride (BN) nanotube
To determine the non-bonded interaction between methyl benzoate and boron nitridenanotube, we focused on an armchair single-wall boron nitride nanotube (9,9) With length 5 angstroms.The geometry of molecules was optimized using B3LYP method with 6-31g* basis set. Also reactivityand stability of methyl benzoate and boron nitride nanotube (9,9) was checked. Then NBO, FREQ,...
متن کاملDefect-related photoluminescence of hexagonal boron nitride
Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time-and energy-resolved spectroscopy methods. The observed bands are related to DAP transitions, impurities and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence (PSL), which is due to distantly trapped CB electrons and...
متن کاملHexagonal boron nitride for deep ultraviolet photonic devices
This paper provides a brief overview on recent advances in tackling the doping and optical polarization issues involved in the development of high performance deep ultraviolet (DUV) light emitting devices. In particular, recent developments in the exploitation of a novel DUV emitter layer structure based on a hexagonal boron nitride (hBN) and AlGaN p–n junction and doping engineering to potenti...
متن کاملResonant Raman scattering in cubic and hexagonal boron nitride
We measured firstand second-order Raman scattering in cubic and hexagonal boron nitride using excitation energies in the visible and in the UV. The nonresonant first-order Raman susceptibilities for cubic and hexagonal BN are 1 and 10 Å2, respectively. Raman scattering is thus very powerful in detecting the hexagonal phase in mixed thin boron nitride films. In cubic BN the constant Raman sucsep...
متن کامل